Title :
Unusual phenomena in CVD SiO2under sustained electron bombardment
Author :
Dobkin, Daniel M. ; Kane, Ronald J.
Author_Institution :
Watkins-Johnson Company, Palo Alto, CA
fDate :
9/1/1980 12:00:00 AM
Abstract :
SEM observations of passivating oxide after roughly 100 h of exposure to 10-12-keV, 1-10-mA/cm2electrons disclosed several unexpected phenomena, including smoothing and removal of the surface, perforation of the layer, and the growth of filaments at the edges of the illuminated regions. Possible explanations for the above are discussed.
Keywords :
Capacitance; Electron devices; Flowcharts; Photonic band gap; Scanning electron microscopy; Semiconductor diodes; Smoothing methods; Solid state circuits; Surface topography; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20114
