Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation

Author

Fujita, Shigeto ; Hussein, Khalid Hassan ; Kitamura, Shuichi ; Yamaguchi, Takashi

Author_Institution

Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan

Volume

24

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

1570

Lastpage

1576

Abstract

High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor´s (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytically using real-sized high-voltage IGBT modules. Generating mechanism of the turn-off oscillations was clarified by 2D device simulation. In addition, a practical method for preventing the turn-off oscillations will be proposed in the paper.

Keywords

insulated gate bipolar transistors; oscillations; power semiconductor devices; transit time devices; 2D device simulation; high-frequency voltage turn-off oscillation; insulated gate bipolar transistor; plasma extraction transit-time theory; real-sized high-voltage IGBT module; Admittance; Capacitance; Electromagnetic interference; Insulated gate bipolar transistors; Insulation; Plasma devices; Plasma properties; Semiconductor diodes; Substrates; Voltage; Device simulation; IGBT; negative resistance; turn-off oscillation;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2009.2015142

Filename

5071724