• DocumentCode
    1070231
  • Title

    Maximum Junction Temperatures of SiC Power Devices

  • Author

    Sheng, Kuang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
  • Volume
    56
  • Issue
    2
  • fYear
    2009
  • Firstpage
    337
  • Lastpage
    342
  • Abstract
    This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200°C, regardless of the device size and the cooling method used.
  • Keywords
    Schottky diodes; junction gate field effect transistors; power MOSFET; power bipolar transistors; resistors; silicon compounds; thermal stability; wide band gap semiconductors; BJT; JFET; MOSFET; Schottky barrier diodes; SiC; cooling method; junction temperatures; physical analysis; resistors; self-heating unipolar power devices; thermal run-away; thermal stabilities; Circuits; Conducting materials; Packaging; Power semiconductor switches; Schottky barriers; Semiconductor materials; Silicon carbide; Temperature; Thermal resistance; Thermal stability; BJT; JFET; MOSFET; Schottky barrier diodes (SBD); SiC; high temperature; power device;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2010605
  • Filename
    4752775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1070231