DocumentCode :
1070381
Title :
Recent Progress in SFQ Device Technologies in Japan
Author :
Tanabe, Keiichi ; Hidaka, Mutsuo
Author_Institution :
ISTEC, Tokyo
Volume :
17
Issue :
2
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
494
Lastpage :
499
Abstract :
Recent progress in single flux quantum (SFQ) device technologies in Japan is described, mainly focusing on those developed in the NEDO "Superconductors Network Device Project" which includes developments of both LTS and HTS devices. The advanced Nb process which consists of a planarized structure with nine Nb layers and 10 kA/cm2 Josephson junctions (JJs) has been developed. This enables fabrication of chips including 100,000 JJs and operating frequency up to 80 GHz. We have also developed the CAD tool by which one can generate SFQ circuit layouts including about 400,000 JJs from logic descriptions. For demonstration of a small-scale switch system, a 4 times 4 switch chip, a 117 Gbps multi-chip-module (MCM) technology, and a packaging technology with 32-ch 10 Gbps I/Os to an MCM have been developed. By using the multilayer process with three HTS epitaxial layers and interface-engineered ramp-edge JJs, we demonstrated operation of SFQ circuits with up to 200 JJs. A variety of elementary SFQ circuits such as a T-FF and a 1:2 switch required for an A/D converter front-end circuit have been designed based on a new layout method, and their operation at 30-50 K has been confirmed. A prototype sampler system is being developed for demonstration of bandwidth over 100 GHz for optical input signals.
Keywords :
cryogenic electronics; high-temperature electronics; integrated circuit layout; integrated circuit packaging; multichip modules; niobium; quantum optics; superconducting integrated circuits; 1:2 switch; 4 times 4 switch chip; A/D converter front-end circuit; CAD tool; HTS epitaxial layers; Japan; Josephson junctions; LTS devices; MCM technology; NEDO Superconductors Network Device Project; Nb - Element; Nb process; SFQ device technologies; T-FF; bandwidth 100 GHz; bit rate 10 Gbit/s; bit rate 117 Gbit/s; circuit layouts; frequency 80 GHz; interface- engineered ramp-edge JJs; multi-chip-module technology; multilayer process; packaging technology; prototype sampler system; single flux quantum device technologies; small-scale switch system; temperature 30 K to 50 K; Fabrication; Frequency; High temperature superconductors; Josephson junctions; Logic circuits; Logic design; Niobium; Packaging; Superconducting devices; Switches; Digital circuits; high-temperature superconductors; niobium; packaging; superconducting devices;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2007.898704
Filename :
4277753
Link To Document :
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