Title :
Characteristics of CO2deposited SIPOS films
Author_Institution :
Intersil, Incorporated, Cupertino, CA
fDate :
11/1/1980 12:00:00 AM
Abstract :
The current-voltage characteristics of CO2CVD SIPOS films were studied. Structures have been used in which the low-field and high-field conduction regimes were covered. The conduction mechanism corresponds to the general symmetrical Schottky-barrier model with a modified number of grains parameter. It has been shown that the high-field regime (2 × 105V/cm) is characterized by nonohmic behavior, which is an important design factor in the design of high-voltage SIPOS passivated devices.
Keywords :
Artificial intelligence; Conductive films; Current-voltage characteristics; Grain size; Helium; Insulation; MOS devices; Semiconductor films; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20149
