Analysis of short-channel MOSFET´s with field-dependent carrier-drift mobility

MOSFET characteristics have been investigated, using two-dimensional analysis which includes field-dependent carrier-drift mobility. It is predicted that drain current is affected by the relationship between carrier-drift velocity and electric-field strength. Reduction mechanisms for normalized drain current and current saturation voltage for short-channel MOSFET\´s have become clear. In the light of the above analysis, an analytical model is presented. The model is simple, in spite of taking the field-dependent carrier-drift mobility and the proper current saturation concept into account. Predicted results are in good agreement with experimental data down to µm.