Buried-grid field-controlled thyristors fabricated using silicon liquid-phase epitaxy

Field-controlled thyristors with the buried-grid device structure have been fabricated by using a recently developed silicon liquid-phase epitaxial growth technology. Using this epitaxial growth technique, closely spaced boron-doped buried-grid regions can be fabricated without autodoping problems. This has allowed the development of high-voltage devices with large blocking gains. The new epitaxial growth technology is potentially useful for the manufacturing of large-area (high-current) devices of this type.