DocumentCode :
1070696
Title :
Profiling of optically active defects
Author :
Greve, David W. ; Dahlke, Walter E.
Author_Institution :
Philips Research Laboratories, Sunnyvale, CA
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2152
Lastpage :
2155
Abstract :
A new method for profiling of optically active defects is presented. Traps in a depletion region are illuminated with chopped extrinsic light 
. The resulting ac photocurrent in the external circuit originates from a small part of the depleted layer. The trap profile is obtained by changing the bias voltage which moves the active traps with respect to the semiconductor surface. The method is illustrated with measurements made on an MOS tunnel device.
. The resulting ac photocurrent in the external circuit originates from a small part of the depleted layer. The trap profile is obtained by changing the bias voltage which moves the active traps with respect to the semiconductor surface. The method is illustrated with measurements made on an MOS tunnel device.Keywords :
Dielectric measurements; Electron optics; Electron traps; Optical filters; Optical refraction; Optical sensors; Permittivity measurement; Photoconductivity; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20164
Filename :
1480957
Link To Document :
