DocumentCode :
1070728
Title :
Carrier injection into the substrate of GaAs MESFET structures
Author :
Tsironis, Christos
Author_Institution :
Laboratories d´´Electronique et de Physique Appliquée, Limeil Brévannes, France
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2160
Lastpage :
2162
Abstract :
The temperature analysis of the excess current, flowing in GaAs MESFET\´s structures after saturation, indicates that carrier multiplication phenomena must occur within the active layer and the interface to cause the substrate current. This current is proportional to VDS rather than to 
. The negative temperature gradient of the excess current is ten times higher than that of the saturation current. Noise measurements reveal the onset of avalanche.
. The negative temperature gradient of the excess current is ten times higher than that of the saturation current. Noise measurements reveal the onset of avalanche.Keywords :
Electron devices; Gallium arsenide; Heterojunctions; Indium phosphide; MESFETs; Neodymium; Schottky barriers; Substrates; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20167
Filename :
1480960
Link To Document :
