• DocumentCode
    1070728
  • Title

    Carrier injection into the substrate of GaAs MESFET structures

  • Author

    Tsironis, Christos

  • Author_Institution
    Laboratories d´´Electronique et de Physique Appliquée, Limeil Brévannes, France
  • Volume
    27
  • Issue
    11
  • fYear
    1980
  • fDate
    11/1/1980 12:00:00 AM
  • Firstpage
    2160
  • Lastpage
    2162
  • Abstract
    The temperature analysis of the excess current, flowing in GaAs MESFET\´s structures after saturation, indicates that carrier multiplication phenomena must occur within the active layer and the interface to cause the substrate current. This current is proportional to VDSrather than to squrt{V_{DS}} . The negative temperature gradient of the excess current is ten times higher than that of the saturation current. Noise measurements reveal the onset of avalanche.
  • Keywords
    Electron devices; Gallium arsenide; Heterojunctions; Indium phosphide; MESFETs; Neodymium; Schottky barriers; Substrates; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20167
  • Filename
    1480960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1070728