DocumentCode
1070735
Title
Analysis of the space-charge region of an asymmetrically graded p-n junction
Author
Rustagi, S.C. ; Chattopadhyaya, S.K.
Author_Institution
Kurukshetra University, Kurukshetra, India
Volume
27
Issue
11
fYear
1980
fDate
11/1/1980 12:00:00 AM
Firstpage
2163
Lastpage
2165
Abstract
The space-charge region of an asymmetrically graded (Gaussian) p-n junction has been analyzed using an iterative scheme. The space-charge and electrostatic potential distributions have been calculated and the results compared with those obtained from rigorous Gummel calculations [8].
Keywords
Charge carrier processes; Doping profiles; Electrostatics; Impurities; Mathematical model; Niobium; Ohmic contacts; P-n junctions; Poisson equations; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20168
Filename
1480961
Link To Document