Title :
Analysis of the space-charge region of an asymmetrically graded p-n junction
Author :
Rustagi, S.C. ; Chattopadhyaya, S.K.
Author_Institution :
Kurukshetra University, Kurukshetra, India
fDate :
11/1/1980 12:00:00 AM
Abstract :
The space-charge region of an asymmetrically graded (Gaussian) p-n junction has been analyzed using an iterative scheme. The space-charge and electrostatic potential distributions have been calculated and the results compared with those obtained from rigorous Gummel calculations [8].
Keywords :
Charge carrier processes; Doping profiles; Electrostatics; Impurities; Mathematical model; Niobium; Ohmic contacts; P-n junctions; Poisson equations; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20168
