Title :
Comments on "A device model for buried-channel CCD\´s and MOSFET\´s with Gaussian impurity profiles
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
Abstract :
In the above paper, an expression for the silicon-surface potential in the ion-implanted channel region of a depletion MOST includes both the flat-band voltage VFBand the potential difference Δ between the conduction band and the Fermi level. It is shown here that Δ is inherently included in VFBhence, the original expression requires correction.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20171
