• DocumentCode
    1070774
  • Title

    A multi-channel time-to-digital converter chip for drift chamber readout

  • Author

    Chau, Alan ; DeBusschere, Derek ; Dow, Scott F. ; Flasck, Jeremy ; Levi, Michael E. ; Kirsten, Frederick ; Su, Edwin ; Santos, Dinis M.

  • Author_Institution
    Lawrence Berkeley Lab., CA, USA
  • Volume
    43
  • Issue
    3
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    1720
  • Lastpage
    1724
  • Abstract
    A complete, multi-channel, timing and amplitude measurement IC for use in drift chamber applications is described. By targeting specific resolutions, i.e. 6-bits of resolution for both time and amplitude, area and power can be minimized while achieving the proper level of measurement accuracy. Time is digitized using an TDC comprised of a delay locked loop, latch and encoder. Amplitude (for dE/dx) is digitized using a dual-range FADC for each channel. Eight bits of dynamic range with six bits of accuracy are achieved with the dual-range. Eight complete channels of timing and amplitude information are multiplexed into one DRAM (Dynamic Random Access Memory) trigger latency buffer. Interesting events are subsequently transferred into an SRAM (Static Random Access Memory) readout buffer before the latency time has expired. The design has been optimized to achieve the requisite resolution using the smallest area and lowest power. The circuit has been implemented in an 0.8 μm triple metal CMOS process. The measured results indicate that the differential non-linearities of the TDC and the FADC are 200 ps and 10 mV, respectively. The integral non-linearities of the TDC and the FADC are 230 ps and 9 mV, respectively
  • Keywords
    CMOS integrated circuits; DRAM chips; SRAM chips; analogue processing circuits; analogue-digital conversion; delay circuits; detector circuits; digital readout; drift chambers; mixed analogue-digital integrated circuits; nuclear electronics; 10 mV; 200 ps; 230 ps; 9 mV; CMOS; DRAM; FADC; SRAM; TDC; delay locked loop; differential nonlinearities; drift chamber readout; encoder; integral nonlinearities; latch; multi-channel time-to-digital converter chip; trigger latency buffer; Application specific integrated circuits; Area measurement; Delay effects; Dynamic range; Latches; Power measurement; Random access memory; Semiconductor device measurement; Time measurement; Timing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.507178
  • Filename
    507178