Title :
MP-A6 characteristics of short-channel MOS transistors fabricated using bulk and SOS technology
Author :
Sun, E. ; Moll, Jonas
fDate :
11/1/1980 12:00:00 AM
Keywords :
Electron mobility; Electron traps; MOS devices; MOSFETs; Scattering; Silicon; Sun; Velocity measurement; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20181
