Title :
TA-A2 electrically alterable read-only memory using Si rich SiO2injectors and a floating polycrystalline silicon storage layer
Author :
DiMaria, D.J. ; Dong, D.W.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Atomic layer deposition; EPROM; Electrons; FETs; Implants; Logic devices; MOSFET circuits; Silicon; Testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20190
