Title :
TA-A3 retention time studies in buried-channel MOSFET dynamic-memory devices
Author :
Chao, H.H. ; Havreluk, R.P.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Chaos; Cities and towns; DRAM chips; Electron devices; Implants; Leakage current; MOSFET circuits; Temperature distribution; Testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20193
