Title :
TP-A2 the cleft process: A technique for producing many epitaxial single-crystal GaAs films by employing one reusable substrate
Author :
McClelland, R.W. ; Bozler, C.O. ; Fan, J.C.C.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Epitaxial growth; Gallium arsenide; Glass; Laboratories; Resists; Semiconductor films; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20208
