DocumentCode
1071203
Title
Analytical Extraction of Extrinsic and Intrinsic FET Parameters
Author
Ooi, Ban Leong ; Zhong, Zheng ; Leong, Mook-Seng
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
57
Issue
2
fYear
2009
Firstpage
254
Lastpage
261
Abstract
The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional ldquocold FETrdquo and ldquohot FETrdquo modeling constraints and allows an ease in inline process tracking.
Keywords
equivalent circuits; field effect transistors; least squares approximations; extrinsic FET parameters; inline process tracking; intrinsic FET parameters; least squares solution; small-signal equivalent circuit; small-signal field-effect transistor; Field-effect transistor (FET); small-signal equivalent circuit;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2008.2011210
Filename
4752858
Link To Document