Title :
Analytical Extraction of Extrinsic and Intrinsic FET Parameters
Author :
Ooi, Ban Leong ; Zhong, Zheng ; Leong, Mook-Seng
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional ldquocold FETrdquo and ldquohot FETrdquo modeling constraints and allows an ease in inline process tracking.
Keywords :
equivalent circuits; field effect transistors; least squares approximations; extrinsic FET parameters; inline process tracking; intrinsic FET parameters; least squares solution; small-signal equivalent circuit; small-signal field-effect transistor; Field-effect transistor (FET); small-signal equivalent circuit;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.2011210
