Title :
TP-B3 uniformly low-threshold diode lasers at 1.5-1.55 µm from VPE In1-xGaxAsyP1-ymaterial
Author :
Johnston, W.D. ; Strege, K.E.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Diode lasers; Fiber lasers; Geometrical optics; Indium phosphide; Laser modes; Optical pulses; Photoluminescence; Temperature; Threshold current; X-ray lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20217
