• DocumentCode
    1071254
  • Title

    Effects of impurities on photocarrier mobility in Bi12SiO20

  • Author

    Sluss, J.J., Jr. ; Tayag, T.J. ; Batchman, T.E.

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Oklahoma Univ., Norman, OK, USA
  • Volume
    139
  • Issue
    5
  • fYear
    1992
  • fDate
    10/1/1992 12:00:00 AM
  • Firstpage
    357
  • Lastpage
    360
  • Abstract
    The impurity content and photocarrier mobility of commercially-grown Bi12SiO20 was characterised. The mobilities were 0.12 cm2/V-s and 0.04 cm2/V-s for samples containing the lowest and highest impurity content, respectively. The difference in mobility is attributed to the formation of deep trapping levels, which is consistent with photocarrier transport dominated by hopping conduction
  • Keywords
    bismuth compounds; carrier mobility; deep levels; hopping conduction; photoconducting materials; photorefractive materials; Bi12SiO20; commercially-grown; deep trapping levels; hopping conduction; impurity content; photocarrier mobility; photocarrier transport; photorefractive materials;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    166698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071254