DocumentCode :
1071292
Title :
WA-A3 formation of n-p-n structures by a combination of double implantation and single-pulse laser annealing
Author :
Tamura, Masato ; Ohkura, Michiko ; Natsuaki, N. ; Tokuyama, Takeshi
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2193
Lastpage :
2194
Keywords :
Annealing; Atomic beams; Atomic layer deposition; Diffusion processes; Impurities; Laboratories; Lattices; Optical pulses; Silicon; Solids;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20222
Filename :
1481015
Link To Document :
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