Title :
WA-B1 direct ion implantation studies of large-diameter undoped GaAs prepared by LEC growth for monolithic X-band power FET circuits
Author :
Eldridge, G.W. ; Barrett, D.L. ; Thomas, R.N.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Chromium; Containers; Crystals; FET circuits; Fabrication; Gallium arsenide; Impurities; Ion implantation; Plasma temperature; Silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20227
