Title :
New Type of Thermal-Isolation Structure Based on PI and OPS Used in Uncooled Infrared Detector
Author :
Liu, Xing-Ming ; Han, Lin ; Liu, Li-Tian
Author_Institution :
Tsinghua Univ., Beijing
fDate :
4/1/2008 12:00:00 AM
Abstract :
A new type of thermal-isolation structure based on polyimide (PI) and oxidized porous silicon (OPS) is presented. The structure has the advantage of simpler process, lower cost, and higher yield. The mechanism is described briefly in this paper and the process is studied in detail. The thermal-isolation capability of the structure is verified by a-Si bolometer with PI and OPS complex thermal isolation structure and excellent performance has been achieved.
Keywords :
infrared detectors; silicon; OPS; PI; bolometer; oxidized porous silicon; polyimide; thermal-isolation capability; thermal-isolation structure; uncooled infrared detector; Conducting materials; Fabrication; Infrared detectors; Microelectronics; Optical imaging; Polyimides; Silicon; Temperature sensors; Thermal conductivity; Vacuum technology; Oxidized porous silicon (POS); polyimide; thermal-isolation structure; uncooled infrared (IR) detector;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2008.917475
