DocumentCode
1071336
Title
New Type of Thermal-Isolation Structure Based on PI and OPS Used in Uncooled Infrared Detector
Author
Liu, Xing-Ming ; Han, Lin ; Liu, Li-Tian
Author_Institution
Tsinghua Univ., Beijing
Volume
8
Issue
4
fYear
2008
fDate
4/1/2008 12:00:00 AM
Firstpage
354
Lastpage
356
Abstract
A new type of thermal-isolation structure based on polyimide (PI) and oxidized porous silicon (OPS) is presented. The structure has the advantage of simpler process, lower cost, and higher yield. The mechanism is described briefly in this paper and the process is studied in detail. The thermal-isolation capability of the structure is verified by a-Si bolometer with PI and OPS complex thermal isolation structure and excellent performance has been achieved.
Keywords
infrared detectors; silicon; OPS; PI; bolometer; oxidized porous silicon; polyimide; thermal-isolation capability; thermal-isolation structure; uncooled infrared detector; Conducting materials; Fabrication; Infrared detectors; Microelectronics; Optical imaging; Polyimides; Silicon; Temperature sensors; Thermal conductivity; Vacuum technology; Oxidized porous silicon (POS); polyimide; thermal-isolation structure; uncooled infrared (IR) detector;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2008.917475
Filename
4453911
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