Title :
WA-B5 high-electron mobility transistors with selectively doped GaAs/n-AlGaAs heterojunctions
Author :
Mimura, Takashi ; Hiyamizu, S. ; Hashimoto, Hiroya ; Fukuta, Masahiro
fDate :
11/1/1980 12:00:00 AM
Keywords :
Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; Hall effect; Heterojunctions; MODFETs; Microwave devices; Superlattices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20234
