A Ka-band 3-bit RF MEMS true-time-delay network

Author

Hacker, Jonathan B. ; Mihailovich, Robert E. ; Kim, Moonil ; DeNatale, Jeffrey F.

Author_Institution

Rockwell Sci. Center, USA

Volume

51

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

305

Lastpage

308

Abstract

A monolithic Ka-band true-time-delay (TTD) switched-line network containing 12 metal-to-metal contact RF microelectromechanical system switches has been successfully fabricated and characterized on a 75-μm-thick GaAs substrate. The compact 9.1-mm² TTD network was designed to produce flat delay time over a dc-to-40-GHz bandwidth with full 360° phase control at 45° intervals at 35 GHz. Measurements show a match to within 2% to the designed delay times at 35 GHz for all eight switch states with 2.2-dB average insertion loss over all states. Peak rms phase error is 2.28° and peak rms amplitude error is 0.28 dB from dc to 40 GHz. Return loss better than 15 dB from dc to 40 GHz for all eight states confirms the circuit´s broad-band operation.

Keywords

microswitches; phase shifters; 0 to 40 GHz; 15 dB; 2.2 dB; 3 bit; GaAs; GaAs substrate; Ka-band; RF MEMS true-time-delay network; insertion loss; metal-to-metal contact switch; monolithic switched-line network; phase shifter; return loss; Bandwidth; Circuits; Computer hacking; Delay; Gallium arsenide; PHEMTs; Phase shifters; Radar antennas; Radiofrequency microelectromechanical systems; Switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.806508

Filename

1159644