DocumentCode :
1071452
Title :
WA-B8 Double-heterostructure Ga
0.47
In
0.53
As MESFET´s
Author :
Ohno, Hideo ; Barnard, J. ; Wood, C.E.C. ; Eastman, L.F.
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2198
Lastpage :
2198
Keywords :
Buffer layers; Doping; Electrons; Fabrication; Gallium arsenide; Indium phosphide; Lattices; MESFETs; Optical noise; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20237
Filename :
1481030
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1071452
