Title :
WP-A4 properties of silicon p-n junction diodes processed with a scanned electron beam
Author :
Johnson, Noble M. ; Sinclair, Robert
fDate :
11/1/1980 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Electron beams; Electron mobility; Laboratories; P-n junctions; Scanning electron microscopy; Schottky diodes; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20239
