DocumentCode
1071469
Title
WP-A4 properties of silicon p-n junction diodes processed with a scanned electron beam
Author
Johnson, Noble M. ; Sinclair, Robert
Volume
27
Issue
11
fYear
1980
fDate
11/1/1980 12:00:00 AM
Firstpage
2199
Lastpage
2199
Keywords
Amorphous materials; Annealing; Electron beams; Electron mobility; Laboratories; P-n junctions; Scanning electron microscopy; Schottky diodes; Silicon; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20239
Filename
1481032
Link To Document