Title :
WP-A7 the elimination of channeling effects on VTuniformity for silicon MESFET VLSI
fDate :
11/1/1980 12:00:00 AM
Keywords :
Degradation; Implants; Instruments; MESFETs; MOS devices; Silicon; Surface acoustic waves; Threshold voltage; Very large scale integration; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20241
