Title :
WP-A6 an ion-implanted Ti-W silicon Schottky-barrier diode
Author :
Li, S.S. ; Kim, Jong Soo ; Kreps, S.A.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Boron; Implants; Ion implantation; MESFETs; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Silicon; Substrates; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20242
