DocumentCode :
1071495
Title :
WP-A6 an ion-implanted Ti-W silicon Schottky-barrier diode
Author :
Li, S.S. ; Kim, Jong Soo ; Kreps, S.A.
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2200
Lastpage :
2200
Keywords :
Boron; Implants; Ion implantation; MESFETs; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Silicon; Substrates; Tungsten;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20242
Filename :
1481035
Link To Document :
بازگشت