Title :
A 50-GHz Phase-Locked Loop in 0.13-μ m CMOS
Author :
Cao, Changhua ; Ding, Yanping ; O, K.K.
Author_Institution :
Florida Univ., Gainesville
Abstract :
A 50-GHz charge pump phase-locked loop (PLL) utilizing an LC-oscillator-based injection-locked frequency divider (ILFD) was fabricated in 0.13-mum logic CMOS process. The PLL can be locked from 45.9 to 50.5 GHz and output power level is around -10 dBm. The operating frequency range is increased by tracking the self-oscillation frequencies of the voltage-controlled oscillator (VCO) and the frequency divider. The PLL including buffers consumes 57 mW from 1.5/0.8-V supplies. The phase noise at 50 kHz, 1 MHz, and 10 MHz offset from the carrier is -63.5, -72, and -99 dBc/Hz, respectively. The PLL also outputs second-order harmonics at frequencies between 91.8 and 101 GHz. The output frequency of 101 GHz is the highest for signals locked by a PLL fabricated using the silicon integrated circuits technology.
Keywords :
CMOS logic circuits; frequency dividers; oscillators; phase locked loops; LC-oscillator-based injection-locked frequency divider; charge pump PLL; frequency 50 GHz; logic CMOS process; phase-locked loop; self-oscillation frequency; size 0.13 mum; voltage-controlled oscillator; CMOS logic circuits; CMOS process; Charge pumps; Frequency conversion; Integrated circuit technology; Phase locked loops; Phase noise; Power generation; Silicon; Voltage-controlled oscillators; CMOS; injection-locked frequency divider (ILFD); millimeter-wave; phase-locked loop (PLL); push-push voltage-controlled oscillator (VCO);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.900289