DocumentCode :
1071544
Title :
WP-B5 deep-level transient spectroscopy (DLTS) characterization of n+-p Hg1-xCdxTe photodiodes
Author :
Polla, D.L. ; Reine, M.B. ; Sood, Ashok ; LoVecchio, P. ; Jones, Cathleen E.
Volume :
27
Issue :
11
fYear :
1980
fDate :
11/1/1980 12:00:00 AM
Firstpage :
2202
Lastpage :
2202
Keywords :
Electron traps; Energy measurement; Force measurement; Photodiodes; Semiconductor diodes; Semiconductor materials; Spectroscopy; Tellurium; Temperature distribution; Temperature measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20247
Filename :
1481040
Link To Document :
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