Title :
"Electrical microscopy" of test parameter inhomogeneities resulting from microdefects in processed silicon wafers
Author :
Varker, C.J. ; Varker, Charles J.
Author_Institution :
Motorola Inc., Phoenix, AZ
fDate :
12/1/1980 12:00:00 AM
Abstract :
Experimental results are presented on reverse current (IR) inhomogeneities in n+-p diode arrays fabricated on wafers selected from dislocation-free Czochralski-grown silicon crystals. The crystals are boron doped with a resistivity of 10 Ω.cm and a
Keywords :
Chemicals; Conductivity; Crystals; Etching; Graphics; Impurities; Optical microscopy; Semiconductor diodes; Silicon; System testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20253
