DocumentCode :
1071702
Title :
On-line capacitance—Voltage doping profile measurement of low-dose ion implants
Author :
Gordon, Barton J.
Author_Institution :
Materials Development Corporation, Reseda, CA
Volume :
27
Issue :
12
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
2268
Lastpage :
2272
Abstract :
An on-line computer-controlled measurement system gathers and analyzes 1-MHz capacitance-voltage data for ion-implanted MOS structures. The analysis algorithm takes into account the majority-carrier distribution for depletion-region widths of less than two Debye lengths and is, therefore, valid for implant profile measurements up to the semiconductor-oxide interface. 
data and implant profiles are presented for low-dose implants in the 1011-1012-cm-2range. The measurement technique is a sensitive indicator of low-dose implant distribution and may be used in the process control of MOSFET threshold-adjusting implants and other low-dose implant applications.
data and implant profiles are presented for low-dose implants in the 1011-1012-cm-2range. The measurement technique is a sensitive indicator of low-dose implant distribution and may be used in the process control of MOSFET threshold-adjusting implants and other low-dose implant applications.Keywords :
Algorithm design and analysis; Capacitance measurement; Capacitance-voltage characteristics; Data analysis; Doping profiles; Implants; Length measurement; MOSFET circuits; Measurement techniques; Process control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20263
Filename :
1481055
Link To Document :
