DocumentCode
1071752
Title
A diagnostic pattern for GaAs FET material development and process monitoring
Author
Immorlica, Anthony A., Jr. ; Decker, D.R. ; Hill, William A.
Author_Institution
Rockwell International Electronics Research Center, Thousand Oaks, CA
Volume
27
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
2285
Lastpage
2291
Abstract
A compact diagnostic pattern containing test structures for the measurement of key materials and device processing parameters is presented. The test devices have been used to study the correlation between the meterial and processing parameters and GaAs FET performance. This diagnostic tool has proven to be an invaluable aid in the development of ion-implanted FET´s.
Keywords
Charge carrier density; Contact resistance; Electrical resistance measurement; Etching; FETs; Gallium arsenide; Implants; Monitoring; Probes; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20267
Filename
1481059
Link To Document