Title :
A diagnostic pattern for GaAs FET material development and process monitoring
Author :
Immorlica, Anthony A., Jr. ; Decker, D.R. ; Hill, William A.
Author_Institution :
Rockwell International Electronics Research Center, Thousand Oaks, CA
fDate :
12/1/1980 12:00:00 AM
Abstract :
A compact diagnostic pattern containing test structures for the measurement of key materials and device processing parameters is presented. The test devices have been used to study the correlation between the meterial and processing parameters and GaAs FET performance. This diagnostic tool has proven to be an invaluable aid in the development of ion-implanted FET´s.
Keywords :
Charge carrier density; Contact resistance; Electrical resistance measurement; Etching; FETs; Gallium arsenide; Implants; Monitoring; Probes; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20267
