Title :
A New Monolithic Ka-Band Filter-Based Voltage-Controlled Oscillator Using 0.15
m GaAs pHEMT Technology
Author :
Chih-Lin Chang ; Chao-Hsiung Tseng ; Hong-Yeh Chang
Author_Institution :
Dept. of Electron. & Comput. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
This letter presents a fully monolithic Ka-band filter-based voltage-controlled oscillator (VCO) with the 0.15 μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) as the active device. A three-pole combline bandpass filter is treated as a frequency stabilization element of the feedback oscillator to achieve a low phase-noise performance. The developed VCO has a frequency tuning range of 37.608-38.06 GHz, and in this frequency rage the calibrated output power is from 6.324 dBm to 10.46 dBm. The phase noise measured at 37.608 GHz is -112.31 dBc/Hz at 1 MHz offset frequency, and its corresponding figure-of-merit (FOM) is -182.7 dBc/Hz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; band-pass filters; circuit tuning; field effect MIMIC; field effect MMIC; gallium arsenide; microwave filters; millimetre wave filters; millimetre wave oscillators; phase noise; voltage-controlled oscillators; GaAs; GaAs pHEMT technology; GaAs pseudomorphic high-electron-mobility transistor; VCO; feedback oscillator; frequency 37.608 GHz to 38.06 GHz; frequency stabilization element; monolithic Ka-band filter; pHEMT; phase noise; size 0.15 mum; three-pole combline bandpass filter; voltage-controlled oscillator; Frequency measurement; Gallium arsenide; Microwave filters; PHEMTs; Phase noise; Voltage-controlled oscillators; Combline filter; GaAs; filter-based microwave oscillator; monolithic microwave integrated circuit (MMIC); pHEMT; voltage-controlled oscillator (VCO);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2290224