DocumentCode
1071801
Title
Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers
Author
Andrews, Joel M. ; Grens, Curtis M. ; Cressler, John D.
Author_Institution
Garmin Int., Olathe, KS
Volume
56
Issue
7
fYear
2009
fDate
7/1/2009 12:00:00 AM
Firstpage
1529
Lastpage
1532
Abstract
Most bipolar-transistor compact models incorporate some level of self-heating capability in order to determine the impact of thermal effects on circuit performance. Techniques for predicting mutual-thermal-coupling effects, however, are not readily available within most commercial CAD platforms. Presented in this brief is a technique which allows for the easy modification of design-kit-supplied models to predict and optimize mutual thermal coupling using commonly available CAD tools such as Cadence and Spectre.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; power amplifiers; semiconductor device models; thermal analysis; CAD tools; HBT power amplifier design; SiGe; bipolar-transistor compact model; mutual thermal coupling; Bipolar transistors; Circuit optimization; Coupling circuits; Design automation; Germanium silicon alloys; Heterojunction bipolar transistors; Mutual coupling; Power amplifiers; Predictive models; Silicon germanium; HiCUM; MEXTRAM; VBIC; mutual thermal coupling; power amplifier (PA); silicon–germanium (SiGe);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2021365
Filename
5072255
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