DocumentCode :
1071801
Title :
Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers
Author :
Andrews, Joel M. ; Grens, Curtis M. ; Cressler, John D.
Author_Institution :
Garmin Int., Olathe, KS
Volume :
56
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
1529
Lastpage :
1532
Abstract :
Most bipolar-transistor compact models incorporate some level of self-heating capability in order to determine the impact of thermal effects on circuit performance. Techniques for predicting mutual-thermal-coupling effects, however, are not readily available within most commercial CAD platforms. Presented in this brief is a technique which allows for the easy modification of design-kit-supplied models to predict and optimize mutual thermal coupling using commonly available CAD tools such as Cadence and Spectre.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; power amplifiers; semiconductor device models; thermal analysis; CAD tools; HBT power amplifier design; SiGe; bipolar-transistor compact model; mutual thermal coupling; Bipolar transistors; Circuit optimization; Coupling circuits; Design automation; Germanium silicon alloys; Heterojunction bipolar transistors; Mutual coupling; Power amplifiers; Predictive models; Silicon germanium; HiCUM; MEXTRAM; VBIC; mutual thermal coupling; power amplifier (PA); silicon–germanium (SiGe);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2021365
Filename :
5072255
Link To Document :
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