Title :
Generalized guide for MOSFET miniaturization
Author :
Brews, J.R. ; Fichtner, W. ; Nicollian, E.H. ; Sze, S.M.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
fDate :
1/1/1980 12:00:00 AM
Abstract :
As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be observed. This approximate relation provides an estimate for MOSFET parameters not requiring reduction of all dimensions by the same scale factor.
Keywords :
Computer errors; Current measurement; Displays; Doping; Length measurement; MOSFET circuits; Parameter estimation; Testing; Variable structure systems; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25205
