• DocumentCode
    1071927
  • Title

    A Ga1-xAlxAs monolithic opto-isolator

  • Author

    Roedel, R.J. ; Dutt, B.V. ; Hamamsy, M.E. ; Keramidas, V.G. ; Saul, R.H. ; Cassiday, D.R.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    1
  • Issue
    2
  • fYear
    1980
  • fDate
    2/1/1980 12:00:00 AM
  • Firstpage
    15
  • Lastpage
    17
  • Abstract
    The performance of a Ga1-xAlxAs monolithic opto-isolator incorporating identical emitter and detector structures is described. The device is fabricated from graded bandgap Ga1-xAlxAs grown by liquid phase epitaxy on a semi-insulating GaAs substrate. Three identical rectangular diode elements are fashioned on the chip; the center element acts as an edge-emitting LED and the outer two bars serve as edge-receiving photodiodes. Air-isolated prototype structures possess optical coupling nearly comparable to typical hybrid devices, and this coupling will be improved by dielectric isolation. Isolation voltages between the LED and the detector exceed 1400 volts. The devices achieve excellent performance in both digital and analog signalling tests.
  • Keywords
    Bars; Detectors; Dielectric substrates; Epitaxial growth; Gallium arsenide; Light emitting diodes; Optical coupling; Photodiodes; Photonic band gap; Prototypes;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25212
  • Filename
    1481074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071927