Title :
Work function of WSi2
Author :
Saraswat, Krishna C. ; Mohammadi, Farah ; Mohammadi, Farrokh
Author_Institution :
Stanford University, Stanford, California
fDate :
2/1/1980 12:00:00 AM
Abstract :
The work function of tungsten disilicide (WSi2) has been measured by MOS capacitance-voltage technique. MOS capacitors with WSi2as the gate material have been fabricated on n-type
Keywords :
Annealing; Capacitance-voltage characteristics; Channel bank filters; Frequency measurement; Integrated circuit measurements; MOS capacitors; Pollution measurement; Silicon; Thickness measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25213
