• DocumentCode
    1071939
  • Title

    Work function of WSi2

  • Author

    Saraswat, Krishna C. ; Mohammadi, Farah ; Mohammadi, Farrokh

  • Author_Institution
    Stanford University, Stanford, California
  • Volume
    1
  • Issue
    2
  • fYear
    1980
  • fDate
    2/1/1980 12:00:00 AM
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    The work function of tungsten disilicide (WSi2) has been measured by MOS capacitance-voltage technique. MOS capacitors with WSi2as the gate material have been fabricated on n-type
  • Keywords
    Annealing; Capacitance-voltage characteristics; Channel bank filters; Frequency measurement; Integrated circuit measurements; MOS capacitors; Pollution measurement; Silicon; Thickness measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25213
  • Filename
    1481075
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071939