Title :
Light emission of GaAs power MESFETs under RF drive
Author :
Tserng, H.Q. ; Frensley, W.R. ; Saunier, P.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
fDate :
2/1/1980 12:00:00 AM
Abstract :
Light emission from microwave power GaAs MESFETs was observed under rf operating conditions. It is shown that the light emission occurs at the drain side of the gate stripe and the light intensity can be correlated with the rf input drive and the output power saturation characteristic of the device.
Keywords :
Aerospace electronics; Contracts; Electron devices; FETs; Gallium arsenide; MESFETs; Power generation; Radio frequency;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25214
