• DocumentCode
    1071949
  • Title

    Light emission of GaAs power MESFETs under RF drive

  • Author

    Tserng, H.Q. ; Frensley, W.R. ; Saunier, P.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    1
  • Issue
    2
  • fYear
    1980
  • fDate
    2/1/1980 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    Light emission from microwave power GaAs MESFETs was observed under rf operating conditions. It is shown that the light emission occurs at the drain side of the gate stripe and the light intensity can be correlated with the rf input drive and the output power saturation characteristic of the device.
  • Keywords
    Aerospace electronics; Contracts; Electron devices; FETs; Gallium arsenide; MESFETs; Power generation; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25214
  • Filename
    1481076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1071949