DocumentCode
1071996
Title
Graded etching of thermal oxide with various angles using silicafilm
Author
Choi, Yearn-Ik ; Kwon, Young-Se ; Kim, Choong-ki
Author_Institution
Korea Advanced Institute of Science, Seoul, Korea
Volume
1
Issue
3
fYear
1980
fDate
3/1/1980 12:00:00 AM
Firstpage
30
Lastpage
31
Abstract
Reproducible tapered windows in thermal oxide have been produced by depositing a silicafilm on the thermal oxide before the chemical etching. As heat treatment temperatures of silicafilms are changed from 200°C to 1,000°C, graded angles are varied approximately from 3° to 25°.
Keywords
Equations; Etching; Hafnium; Heat treatment; Interference; Optical buffering; Optical microscopy; Resists; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25219
Filename
1481081
Link To Document