DocumentCode :
1072017
Title :
Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs
Author :
Asbeck, P.M. ; Tandon, J. ; Welch, B.M. ; Evans, C.A., Jr. ; Deline, V.R.
Author_Institution :
Rockwell International Electronics Research Center, Thousand Oaks, CA
Volume :
1
Issue :
3
fYear :
1980
fDate :
3/1/1980 12:00:00 AM
Firstpage :
35
Lastpage :
37
Abstract :
The redistribution of Cr is shown to be responsible for the formation of deep trails in the electron density profiles of certain semi-insulating GaAs substrates following Se ion implantation and annealing, and for the formation of spurious n-type conducting layers in those substrates following encapsulation with Si3N4and annealing without implantation.
Keywords :
Annealing; Chromium; Electric variables; Electrons; Fabrication; Gallium arsenide; Impurities; Insulation; Substrates; Surface treatment;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25221
Filename :
1481083
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1072017
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