• DocumentCode
    1072070
  • Title

    Polar mode scattering in ballistic transport GaAs devices

  • Author

    Maloney, Timothy J.

  • Author_Institution
    Corporate Research Laboratory, Varian Associates, Inc., Palo Alto, CA
  • Volume
    1
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    54
  • Lastpage
    54
  • Abstract
    Polar optic scattering in a ballistic transport n-GaAs device at 77 K is shown to be significant for voltages above the threshold for polar phonon emission, 0.035 V. Monte Carlo results for electron effective velocities at fields expected in such devices support this conclusion.
  • Keywords
    Ballistic transport; Electron emission; Electron optics; Gallium arsenide; Monte Carlo methods; Optical devices; Optical scattering; Phonons; Stimulated emission; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25227
  • Filename
    1481089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072070