Title :
Polar mode scattering in ballistic transport GaAs devices
Author :
Maloney, Timothy J.
Author_Institution :
Corporate Research Laboratory, Varian Associates, Inc., Palo Alto, CA
fDate :
4/1/1980 12:00:00 AM
Abstract :
Polar optic scattering in a ballistic transport n-GaAs device at 77 K is shown to be significant for voltages above the threshold for polar phonon emission, 0.035 V. Monte Carlo results for electron effective velocities at fields expected in such devices support this conclusion.
Keywords :
Ballistic transport; Electron emission; Electron optics; Gallium arsenide; Monte Carlo methods; Optical devices; Optical scattering; Phonons; Stimulated emission; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25227
