DocumentCode :
1072081
Title :
Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode
Author :
Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Ando, Hiroaki ; Kanbe, Hiroshi
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume :
1
Issue :
4
fYear :
1980
fDate :
4/1/1980 12:00:00 AM
Firstpage :
55
Lastpage :
57
Abstract :
A punch-through type planar photodiode with low dark current and high speed response was fabricated from low carrier density In0.53Ga0.47As grown by vapor-phase epitaxy. Dark current density was 3.1 × 10-5A/cm2at 10 V bias. Rise time and full width at half maximum were 82 and 126 psec, respectively, at a bias above 4 V.
Keywords :
Dark current; Diodes; Epitaxial layers; Etching; Indium gallium arsenide; Indium phosphide; Laser mode locking; Quantum capacitance; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1980.25228
Filename :
1481090
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1072081
بازگشت