• DocumentCode
    1072081
  • Title

    Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode

  • Author

    Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Ando, Hiroaki ; Kanbe, Hiroshi

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
  • Volume
    1
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    55
  • Lastpage
    57
  • Abstract
    A punch-through type planar photodiode with low dark current and high speed response was fabricated from low carrier density In0.53Ga0.47As grown by vapor-phase epitaxy. Dark current density was 3.1 × 10-5A/cm2at 10 V bias. Rise time and full width at half maximum were 82 and 126 psec, respectively, at a bias above 4 V.
  • Keywords
    Dark current; Diodes; Epitaxial layers; Etching; Indium gallium arsenide; Indium phosphide; Laser mode locking; Quantum capacitance; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25228
  • Filename
    1481090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072081