Ambipolar transport in double heterostructure injection lasers

Ambipolar conduction through the electrical confinement layers is shown to influence the properties of some double heterostructure injection lasers. A model of contact-limited ambipolar conduction is consistent with known material parameters of (Al,Ga)As lasers and explains several anomalies in the measured device electrical characteristics. The portion of current lost to lasing due to poor carrier confinement in the active region of injection lasers may be greater than previously expected.