DocumentCode
1072141
Title
Low-Temperature Annealing Effect of RF Inductor With FeNi-SiO2 Granular Film
Author
Sun, Hongfang ; Liu, Zewen ; Zhao, Jiahao ; Wang, Li ; Zhu, Jing
Author_Institution
Tsinghua Univ., Beijing
Volume
43
Issue
8
fYear
2007
Firstpage
3457
Lastpage
3461
Abstract
A low-temperature annealing process in vacuum is proposed to enhance the inductance of RF inductors with FeNi-SiO2 magnetic granular films. Due to the great improvement of soft magnetic property in the 200degC and 350degC annealed film, the inductance is enhanced by 9.6% (200degC) and 8.3% (350degC), respectively, compared with the case of as-deposited film inductor. The peak value of quality factor, which is 9.18 for the as-deposited film inductor, is also increased to 9.27 (200degC ) and 12.27 (350degC), respectively.
Keywords
Q-factor; annealing; granular materials; iron alloys; magnetic thin film devices; nickel alloys; silicon compounds; soft magnetic materials; thin film inductors; FeNi-SiO2 - Interface; RF inductor; inductance; low-temperature annealing effect; magnetic granular films; quality factor; soft magnetic property; temperature 200 degC; temperature 350 degC; Annealing; Coils; Inductance; Inductors; Magnetic cores; Magnetic films; Magnetic materials; Radio frequency; Spirals; Sputtering; ${hbox{FeNi-SiO}}_{2}$ ; Annealing; film inductor; granular film; quality factor;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2007.898799
Filename
4277914
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