Title :
An In0.53Ga0.47As junction field-effect transistor
Author :
Leheny, R.F. ; Nahory, R.E. ; Pollack, M.A. ; Ballman, A.A. ; Beebe, E.D. ; DeWinter, J.C. ; Martin, R.J.
Author_Institution :
Bell Laboratories, Holmdel, N.J
fDate :
6/1/1980 12:00:00 AM
Abstract :
Preliminary results are reported for the operation of a junction field-effect transistor fabricated from In0.53Ga0.47As grown lattice-matched to an InP:Fe substrate.
Keywords :
Crystalline materials; FETs; Gallium arsenide; Indium phosphide; Lattices; Optical devices; Optical materials; Optical scattering; P-n junctions; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25249
