• DocumentCode
    1072303
  • Title

    An In0.53Ga0.47As junction field-effect transistor

  • Author

    Leheny, R.F. ; Nahory, R.E. ; Pollack, M.A. ; Ballman, A.A. ; Beebe, E.D. ; DeWinter, J.C. ; Martin, R.J.

  • Author_Institution
    Bell Laboratories, Holmdel, N.J
  • Volume
    1
  • Issue
    6
  • fYear
    1980
  • fDate
    6/1/1980 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    Preliminary results are reported for the operation of a junction field-effect transistor fabricated from In0.53Ga0.47As grown lattice-matched to an InP:Fe substrate.
  • Keywords
    Crystalline materials; FETs; Gallium arsenide; Indium phosphide; Lattices; Optical devices; Optical materials; Optical scattering; P-n junctions; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1980.25249
  • Filename
    1481111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1072303