Title :
150 GHz GaAs MITATT source
Author :
Elta, M.E. ; Fetterman, H.R. ; Macropoulos, W.V. ; Lambert, J.J.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Massachusetts
fDate :
6/1/1980 12:00:00 AM
Abstract :
The performance of a GaAs Schottky barrier transmit-time source is described. The device is reversed biased into mixed tunnel-avalanche breakdown. A CW output power of 3 mW with 1/2% conversion efficiency has been measured at 150 GHz. This is the highest frequency CW GaAs source built to date and has many potential applications in systems requiring a low noise local oscillator in near millimeter microwave integrated circuits.
Keywords :
Application specific integrated circuits; Electric breakdown; Frequency; Gallium arsenide; Integrated circuit measurements; Integrated circuit noise; Local oscillators; Power generation; Power measurement; Schottky barriers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25251
