Title :
One-gate-wide CMOS Inverter on laser-recrystallized polysilicon
Author :
Gibbons, J.F. ; Lee, K.F.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
fDate :
6/1/1980 12:00:00 AM
Abstract :
A CMOS inverter having a single gate for both n and p channel devices has been fabricated using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n channel device. The fabrication details and dc electrical performance of this device are described.
Keywords :
Argon; Chemical vapor deposition; Crystallization; Fabrication; Inverters; Optical materials; Oxidation; Semiconductor films; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25252
