DocumentCode
1072430
Title
High-frequency effects of ballistic electron transport in semiconductors
Author
Frensley, W.R.
Author_Institution
Texas Instruments Incorporated, Dallas, Texas
Volume
1
Issue
7
fYear
1980
fDate
7/1/1980 12:00:00 AM
Firstpage
137
Lastpage
139
Abstract
The response of a semiconductor to a high-frequency electric field is studied using a simple method of electron transport which includes both ballistic and dissipative effects. Ballistic motion appears as an inductive reactance. The significance of ballistic transport can be quantitatively expressed by the Q of the free-carrier plasma resonance. It is shown that the condition Q > 1 should hold for high-purity GaAs at low temperatures and that this condition could be verified by measurements at frequencies well below the plasma frequency.
Keywords
Ballistic transport; Current density; Electrons; Equations; Frequency; Plasma devices; Plasma measurements; Plasma temperature; Plasma transport processes; Resonance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1980.25261
Filename
1481123
Link To Document