Title :
Corrections to "Degradation of the doping profile of epitaxial GaAs layers due to an ion implantation process"
Author :
Tsuji, Takao ; Hasegawa, Fumihiro
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
fDate :
7/1/1980 12:00:00 AM
Abstract :
Corrections are made to the text on page 112, colum 2, line 18 from top, and page 113, column 1, line 4 from top.
Keywords :
Degradation; Doping profiles; Electron devices; Gallium arsenide; Ion implantation; Plasma devices; Plasma immersion ion implantation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1980.25263
